论文降重
免费查重- 钛学术文献服务平台 \
- 学术期刊 \
- 综合期刊 \
- 其它期刊 \
- 仪器仪表学报：英文版期刊 \
Overview of one transistor type of hybrid organic ferroelectric non-volatile memory
Overview of one transistor type of hybrid organic ferroelectric non-volatile memory
基本信息来源于合作网站，原文需代理用户跳转至来源网站获取
摘要：
Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.
推荐文章
Organic geochemistry of the Lower Permian Tak Fa Formation in Phetchabun Province, Thailand: implica
Biomarker
Depositional environment
Source inputs
Tak Fa Formation
Khao Khwang Platform
一种基于XML的One to One营销优化建模方法
One to One营销优化模型
XML
DOM
自定义建模
一类One to One营销优化模型及其解决方案
One to One营销优化
优化模型
线性规划算法
MATLAB
一类One to One安排优化问题及其进化算法
遗传算法
安排问题
组合优化
局部搜索
内容分析
关键词云
关键词热度
相关文献总数
(/次)
(/年)
文献信息
| 篇名 | Overview of one transistor type of hybrid organic ferroelectric non-volatile memory | ||
| 来源期刊 | 仪器仪表学报：英文版 | 学科 | 工学 |
| 关键词 | ORGANIC FERROELECTRIC field effect TRANSISTOR non-volatile MEMORY HYBRID | ||
| 年，卷（期） | 2015,（1） | 所属期刊栏目 | |
| 研究方向 | 页码范围 | 65-74 | |
| 页数 | 10页 | 分类号 | TP333 |
| 字数 | 语种 | ||
| DOI | |||
五维指标
引文网络
引文网络
二级参考文献 (0)
共引文献 (0)
参考文献 (0)
节点文献
引证文献 (0)
同被引文献 (0)
二级引证文献 (0)
2015(0)
- 参考文献(0)
- 二级参考文献(0)
- 引证文献(0)
- 二级引证文献(0)
研究主题发展历程
节点文献
ORGANIC
FERROELECTRIC
field
effect
TRANSISTOR
non-volatile
MEMORY
HYBRID
研究起点
研究来源
研究分支
研究去脉
引文网络交叉学科
相关学者/机构
期刊影响力
仪器仪表学报：英文版
主办单位：
中国仪器仪表学会
科学普及出版社
出版周期：
季刊
ISSN：
2095-7521
CN：
10-1206/TH
开本：
出版地：
北京市
邮发代号：
创刊时间：
语种：
出版文献量（篇）
134
总下载数（次）
0
总被引数（次）
0
期刊文献
相关文献
推荐文献
